Morusupalli, Rao

School of Engineering

I am dedicated to fostering curiosity, innovation, and ethical thinking in young minds. My goal is to create a dynamic learning environment where students can explore, discover, and excel in engineering while understanding the importance of ethical practices. Together, we will embark on a journey of knowledge and growth, paving the way for future engineering and scientific breakthroughs with integrity. Without ethics, even the greatest treasures of the world are worthless. Integrity is our most valuable asset.

Ph.D. Materials Science and Engineering
M.S. Materials Science and Engineering
B.S. Electrical Engineering

• Semiconductors, Thin Films, Materials and Interfaces, Device Physics
• Magnetism in Electronic Materials, Search for Magnetic Monopoles
• Integrated Circuit Fabrication Technology, Reliability
• Design for Reliability, Electromigration in Metals
• Theoretical and Numerical Modeling, Atomistic modeling, Applied Statistics
• Machine Learning and AI (Property Prediction, Structure property relationship)
• AI assisted Microstructure analysis (Phases, Defects, Performance)

• ENGR 1
• ENGR 1L

• Materials Research Society (MRS)
• American Institute of Physics (AIP)
• Institute of Electrical and Electronics Engineers (IEEE)
• American Physical Society (APS)
• American Society for Engineering Education (ASEE)
• Materials Science and Engineering, Stanford University
• Stanford University Alumni Association (SAA)
• The American Radio Relay League (ARRL)
• Leave No Trace Organization (LNT)

• Cambridge University Press, 9781107408982, Materials, Technology and Reliability for Advanced Interconnects 2005

• Morusupalli, R., "From Early Discoveries to a New Hypothesis - A Brief History of Atomic Magnetism and Magnetic Monopoles," 2023 8th IEEE History of Electrotechnology Conference (HISTELCON), Florence, Italy, 2023, pp. 11-15, doi: 10.1109/HISTELCON56357.2023.10365814.
  
  
• Morusupalli, R., Littlefield, D., & Nix, W. (2021). Impact of Lorentz Force on Atomic Flux During Electromigration. In 2021 IEEE International Integrated Reliability Workshop (IIRW) (pp. 1–4).
  
  
• Tian, T., Morusupalli, R., Shin, H., Son, H.Y., Byun, K.Y., Joo, Y.C., Caramto, R., Smith, L., Shen, Y., Kunz, M., & others (2016). On the mechanical stresses of cu through-silicon via (tsv) samples fabricated by sk hynix vs. sematech–enabling robust and reliable 3-d interconnect/integrated circuit (ic) technology. Procedia Engineering, 139, 101–111.
  
  
• Morusupalli, R., Rao, R., Lee, T.K., Shen, Y.L., Kunz, M., Tamura, N., & Budiman, A. (2012). Critical temperature shift for Stress Induced Voiding in advanced Cu interconnects for 32 nm and beyond. In 2012 IEEE International Reliability Physics Symposium (IRPS) (pp. EM–8).
  
  
• Budiman, A., Morusupalli, R., Lee, T.K., Shen, Y.L., Hwang, S.H., Kim, B.J., Son, H.Y., Suh, M.S., Chung, Q.H., Byun, K.Y., & others (2011). Plasticity and Reliability: From Unexpected Plasticity-Induced Damages in Advanced Cu Interconnects to Novel Reliability Phenomena in 3-D Interconnect Schemes Using Through-Silicon Vias(TSV) Technology. Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Feb.
  
  
• Morusupalli, R. (2010). Plastic Relaxation during Thermal Loading in Advanced Cu Interconnects at Intermediate Temperatures: Implications for Stress-induced Voiding (SIV) in Advanced Interconnect Nodes. In Advanced Metallization Conference 2010 (pp. 51–53).
  
  
• Morusupalli, R., et al. (2009). Addressing IC component Quality and Reliability assurance challenges. In 2009 IEEE International Reliability Physics Symposium (pp. 810–813).
  
  
• Morusupalli, R., Nix, W., & Patel, J. (2007). Comparison of Line stress predictions with measured electromigration failure times. In 2007 IEEE International Integrated Reliability Workshop Final Report (pp. 124–127).