Santa Clara University


Mahmudur Rahman, Ph.D.

Mahmudur Rahman Title: Associate Professor of Electrical Engineering
Office: EC 208
Phone: 408-554-4175
Fax: 408-554-5474
Website: N/A
Education: Dr. Eng., Tokyo Institute of Technology, 1984
M. Eng., Tokyo Institute of Technology, 1981
BSEE, University of Engineering and Technology, Dhaka, Bangladesh, 1969
Interests: Microelectronics



Current Research Interests


Recent Publications 

  • RAHMAN, Mahmud with Ayhan A. Mutlu, Norman G. Gunther, "Analysis of Two-dimensional Effects on Subthreshold Current in Submicron MOS Transistors," Solid State Electronics, Vol. 46, Issue 8, Pergamon, August 2002, pp. 1133-1137.
  • RAHMAN, Mahmud with Zemo Yang and Samiha Mourad, "Signal Integrity and Design Consideration of an MCM for Video Graphic Acceleration," IEEE Trans. on Advanced Packaging, Vol. 24, No. 3, August 2001, pp 309-316.
  • RAHMAN, Mahmud with Norman G. Gunther, Ayhan A. Mutlu, "A Quantum-mechanically Corrected Variational Principle for MOS Devices, Leading to a Deep Sub-0.1 micron MOS Capacitor Model," to be published in Journal of Applied Physics.
  • RAHMAN, Mahmud with Yuri Glukhoy, Gotze Popov, Alexander Usenko, and Hans J. Walitzki, "Characterization of a High Density Plasma Immersion Ion Implanter with Scaleable ECR Large Area Plasma Source" to be published in Surface and Coatings Technology.
  • RAHMAN, Mahmud with N. G. Gunther, and A. A. Mutlu, in Conf. Dig. 61st Device Research Conference, June 23-25, 2002, University of Utah, Salt Lake City, Utah (IEEE, Piscataway, NJ, 2002), pp. 53-54.



Courses Taught


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